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- Title
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaP)<sub>x</sub>0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
- Authors
Saidov, A. S.; Saparov, D. V.; Usmonov, Sh.N.; Kutlimratov, A.; Abdiev, J.M.; Kalanov, M.; Razzakov, A.Sh.; Akhmedov, A.M.
- Abstract
Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.
- Subjects
ENERGY level transitions; EPITAXIAL layers; SOLID solutions; ELECTRON transitions; PHOTOLUMINESCENCE; CONDUCTION bands
- Publication
Advances in Condensed Matter Physics, 2021, p1
- ISSN
1687-8108
- Publication type
Article
- DOI
10.1155/2021/3472487