Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleReply to 'Measurement of mobility in dual-gated MoS<sub>2</sub> transistors'.AuthorsRadisavljevic, B.; Kis, A.AbstractA response by B. Radisavljevic and A. Kis to a letter to the editor about their article "Measurement of Mobility in Dual-Gated MoS2 Transistors" that was published in the 2011 issue is presented.SubjectsMETAL oxide semiconductors; TRANSISTORSPublicationNature Nanotechnology, 2013, Vol 8, Issue 3, p147ISSN1748-3387Publication typeArticleDOI10.1038/nnano.2013.31