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- Title
A wideband GaN HEMT power amplifier based on the dual-fed distributed structure for WiMAX applications.
- Authors
Lee, Yong-Sub; Lee, Mun-Woo; Jeong, Yoon-Ha
- Abstract
In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dual-fed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA is optimized by controlling the gate bias voltages, the wideband performance over 150 MHz is achieved for a WiMAX signal with a PAR of 9.47 dB and the signal bandwidth of 28 MHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 574–577, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24090
- Subjects
POWER amplifiers -- Design &; construction; WIRELESS communications -- Design &; construction; BANDWIDTHS; IEEE 802.16 (Standard); BROADBAND amplifiers
- Publication
Microwave & Optical Technology Letters, 2009, Vol 51, Issue 2, p574
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.24090