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- Title
Tailoring sub-bandgap of CuGaS<sub>2</sub> thin film via chromium doping by facile chemical spray pyrolysis technique.
- Authors
Kalainathan, S.; Ahsan, N.; Hoshii, T.; Okada, Y.; Logu, T.; Sethuraman, K.
- Abstract
Tailoring sub-bandgaps using intermediate states or bands with wide bandgap semiconductors is a promising and novel technique for the application in high efficiency solar cells. Pure and chromium (Cr) doped chalcopyrite CuGaS2 (CGS) thin films were prepared by facile chemical spray pyrolysis technique and annealed in vacuum, nitrogen and argon atmospheres. Structural characterization confirmed that the prepared films are in tetragonal chalcopyrite structure with polycrystalline nature. No secondary phases were present in both pure and Cr doped CGS thin films. Presence of Cr ions was confirmed by X-ray photoelectron spectroscopy and energy dispersive analysis of X-rays analyses. The optical direct and sub band gap of pristine and Cr doped CGS thin films were measured from UV absorption data. It was revealed that the pure CGS film has a band gap of 2.40 eV sub-band gap values were observed at 2.25 and 2.15 eV for 1 and 2 wt% of Cr doping, respectively. These gaps can be ascribed to the formation of intermediate bands due to hybridization of Cr d-states into the host electronic structure. Meanwhile, photoconductivity study demonstrated the photo-electric activity of the intermediate bands in the Cr doped thin films.
- Subjects
COPPER gallium selenide; THIN films; WIDE gap semiconductors; SEMICONDUCTOR doping; PYROLYSIS; SOLAR cell efficiency; X-ray photoelectron spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2018, Vol 29, Issue 22, p19359
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-018-0065-2