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- Title
Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field.
- Authors
Dang, Suihu; Li, Chunxia; Han, Peide; Jia, Wei; Zhang, Zhuxia; Zhang, Hua; Liang, Jian; Jia, Husheng; Liu, Xuguang; Xu, Bingshe
- Abstract
In this study, the properties of light propagation for a GaN semiconductor when subjected to a periodic external magnetic field were calculated by means of a transfer matrix. The dielectric function which was modulated periodically by the periodic external magnetic field caused changes of photonic band gap (PBG). In the reflection spectra, photons can be localized in the narrow bands. The position and intensity of PBGs can be modulated by changing the periodic external magnetic field and angle of the incident electromagnetic wave. All of these results have shown that a semiconductor has functions similar to conventional photonic crystals subjected to periodic external magnetic field.
- Subjects
OPTICAL properties of gallium nitride; OPTICAL properties; PHOTONIC crystals; OPTICAL properties of semiconductors; MAGNETIC fields; TRANSFER matrix; PHOTONIC band gap structures; ELECTROMAGNETIC waves; DIELECTRICS
- Publication
Journal of Materials Science, 2013, Vol 48, Issue 3, p1147
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-012-6852-x