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- Title
First Measurement of the Intrinsic Noise of a HEMT at Sub-Kelvin Temperatures.
- Authors
Torres, L.; Arcambal, C.; Delisle, C.; Dong, Q.; Jin, Y.; Rodriguez, L.; Cara, C.
- Abstract
The increasing sensitivity of high impedance cryogenic detectors demands amplification stages closer to detectors to guarantee high performance. We have developed a cryogenic installation to measure the intrinsic noise, the gain, and the DC characteristics of HEMTs or MOSFETs at low temperature. Components under test are mounted in a helium cryostat containing a double stage $$^{3}$$ He/ $$^{4}$$ He sorption cooler to perform sub-kelvin measurements. In this work, we describe this installation and present the encouraging first results that have revealed a level of intrinsic input voltage noise of a HEMT, developed by CNRS/LPN, of 0.44 nV/sqrt(Hz) at 1 kHz at 480 mK (Cin $$=$$ 100 pF).
- Subjects
MODULATION-doped field-effect transistors; KELVIN temperature scale; ELECTRIC impedance; CRYOGENICS; METAL oxide semiconductor field-effect transistors; WAVE amplification; ELECTRIC noise measurement
- Publication
Journal of Low Temperature Physics, 2016, Vol 184, Issue 1/2, p466
- ISSN
0022-2291
- Publication type
Article
- DOI
10.1007/s10909-016-1565-1