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- Title
Cathodoluminescence from intermixed quantum-well structures: Evidence of remote luminescence.
- Authors
Norman, C. E.; Ghisoni, M.
- Abstract
Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the lateral extent of the transition region between areas of a GaAs/AlGaAs multi-quantum well annealed with and without intentional introduction of group III vacancies from an SiO2 surface layer. The results show that in structures in which the band gap varies from area to area by, for example, tens of meV over distances of a few μm, carrier drift prior to radiative recombination is an important factor. This phenomenon, which we designate 'luminescence after drift' has important implications, not only in CL studies of device structures and materials systems in which lateral band gap variations exist, but also in determining the lower-limit size and separation of optoelectronic devices fabricated by techniques such as vacancy-enhanced intermixing.
- Publication
Scanning, 1993, Vol 15, Issue 6, p325
- ISSN
0161-0457
- Publication type
Article
- DOI
10.1002/sca.4950150605