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- Title
Effect of film thickness and annealing on optical properties of TiO thin films and electrical characterization of MOS capacitors.
- Authors
Vishwas, M.; Narasimha Rao, K.; Chakradhar, R.; Raichur, Ashok
- Abstract
Titanium dioxide (TiO) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO films was studied. TiO films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.
- Subjects
TITANIUM oxides; THIN films; OPTICAL properties; MOLYBDENUM sulfides; CAPACITORS; SOL-gel processes; EFFECT of temperature on thin films
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 10, p4495
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2193-7