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- Title
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.
- Authors
Garbe, Valentin; Abendroth, Barbara; Stöcker, Hartmut; Gavrilov, Arkadi; Cohen‐Elias, Doron; Mehari, Shlomo; Ritter, Dan; Meyer, Dirk C.
- Abstract
Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN layer model, including doping profile and mobility, is derived, utilizing electrical (capacitance-voltage, Hall), structural (high resolution X-ray diffraction) and optical (polarized infrared spectroscopy) methods. Oxygen and hydrogen are easily incorporated during hydride vapor phase epitaxy growth of GaN. Oxygen is an n-type dopant in GaN, whereas hydrogen may passivate some of the donors. Electrical and optical properties correlate with a low defect concentration top GaN layer and a high defect concentration GaN interlayer.
- Subjects
ELECTRIC properties of gallium nitride; OPTICAL properties of gallium nitride; SECONDARY ion mass spectrometry; GALLIUM nitride epitaxy; SEMICONDUCTOR doping profiles
- Publication
Crystal Research & Technology, 2015, Vol 50, Issue 6, p425
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.201400468