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Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature.
Published in:
Technical Physics Letters, 2009, v. 35, n. 9, p. 857, doi. 10.1134/S1063785009090211
By:
- Imenkov, A. N.;
- Sherstnev, V. V.;
- Sipovskaya, M. A.;
- Astakhova, A. P.;
- Grebenshchikova, E. A.;
- Monakhov, A. M.;
- Kalinina, K. V.;
- Boissier, G.;
- Teissier, R.;
- Baranov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article
Photodiodes based on n-GaSb/ n-GaInAsSb/ p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range.
Published in:
Technical Physics Letters, 2009, v. 35, n. 1, p. 67, doi. 10.1134/S1063785009010209
By:
- Imenkov, A. N.;
- Zhurtanov, B. E.;
- Astakhova, A. P.;
- Kalinina, K. V.;
- Mikhailova, M. P.;
- Sipovskaya, M. A.;
- Stoyanov, N. D.
Publication type:
Article
Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range.
Published in:
Technical Physics Letters, 2008, v. 34, n. 10, p. 881, doi. 10.1134/S1063785008100210
By:
- Astakhova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kalinina, K. V.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range.
Published in:
Technical Physics Letters, 2007, v. 33, n. 10, p. 809, doi. 10.1134/S1063785007100021
By:
- Astakhova, A. P.;
- Zhurtanov, B. E.;
- Imenkov, A. N.;
- Mikhailova, M. P.;
- Sipovskaya, M. A.;
- Stoyanov, N. D.;
- Yakovlev, Yu. P.
Publication type:
Article
High-Efficiency LEDs Based on GaInAsSb Solid Solutions with Reduced Arsenic Content in the Active Region.
Published in:
Technical Physics Letters, 2005, v. 31, n. 3, p. 238, doi. 10.1134/1.1894444
By:
- Zhurtanov, B. E.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
AlGaAsSb lasers emitting in the 1.6 μm region.
Published in:
Technical Physics Letters, 1999, v. 25, n. 5, p. 395, doi. 10.1134/1.1262494
By:
- Danilova, T. N.;
- Zhurtanov, B. E.;
- Imenkov, A. N.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures.
Published in:
Semiconductors, 2011, v. 45, n. 3, p. 355, doi. 10.1134/S1063782611030110
By:
- Imenkov, A.;
- Sherstnev, V.;
- Grebenshchikova, E.;
- Sipovskaya, M.;
- Larchenkov, M.;
- Tarasov, D.;
- Baranov, A.;
- Yakovlev, Yu.
Publication type:
Article
Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range.
Published in:
Semiconductors, 2008, v. 42, n. 4, p. 458, doi. 10.1134/S1063782608040155
By:
- Zhurtanov, B.;
- Il’inskaya, N.;
- Imenkov, A.;
- Mikhaĭlova, M.;
- Kalinina, K.;
- Sipovskaya, M.;
- Stoyanov, N.;
- Yakovlev, Yu.
Publication type:
Article
The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties of GaInAsSb Solid Solutions Grown from Lead-Containing Melt.
Published in:
Semiconductors, 2005, v. 39, n. 3, p. 308, doi. 10.1134/1.1882792
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Lipaev, A. F.;
- Kunitsyna, E. V.;
- Parkhomenko, Ya. A.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Moiseev, K. D.;
- Rozov, A. E.;
- Sipovskaya, M. A.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 206, doi. 10.1134/1.1187671
By:
- Danilova, T. N.;
- Zhurtanov, B. E.;
- Zakgeım, A. L.;
- Il’inskaya, N. D.;
- Imenkov, A. N.;
- Saraev, O. N.;
- Sipovskaya, M. A.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence.
Published in:
Semiconductors, 1998, v. 32, n. 3, p. 250, doi. 10.1134/1.1187389
By:
- Voronina, T. I.;
- Dzhurtanov, B. E.;
- Lagunova, T. S.;
- Sipovskaya, M. A.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution.
Published in:
Semiconductors, 1997, v. 31, n. 8, p. 763, doi. 10.1134/1.1187244
By:
- Voronina, T. I.;
- Lagunova, T. S.;
- Mikhaılova, M. P.;
- Moiseev, K. D.;
- Sipovskaya, M. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures.
Published in:
Technical Physics Letters, 2010, v. 36, n. 7, p. 626, doi. 10.1134/S1063785010070126
By:
- Imenkov, A. N.;
- Sherstnev, V. V.;
- Monakhov, A. M.;
- Grebenshchikova, E. A.;
- Golovin, A. S.;
- Sipovskaya, M. A.;
- Starostenko, D. A.;
- Larchenkov, M. I.;
- Troshkov, S. I.;
- Tarasov, D. I.;
- Baranov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article
Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure.
Published in:
Technical Physics Letters, 2010, v. 36, n. 4, p. 351, doi. 10.1134/S1063785010040188
By:
- Sherstnev, V. V.;
- Imenkov, A. N.;
- Astakhova, A. P.;
- Grebenshchikova, E. A.;
- Kizhaev, S. S.;
- Sipovskaya, M. A.;
- Baranov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article
Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature.
Published in:
Technical Physics Letters, 2009, v. 35, n. 12, p. 1149, doi. 10.1134/S1063785009120220
By:
- Imenkov, A. N.;
- Sherstnev, V. V.;
- Sipovskaya, M. A.;
- Grebenshchikova, E. A.;
- Monakhov, A. M.;
- Boissier, G.;
- Teissier, R.;
- Baranov, A. N.;
- Yakovlev, Yu. P.
Publication type:
Article

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