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- Title
Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon.
- Authors
Vabishchevich, S. A.; Vabishchevich, N. V.; Brinkevich, S. D.; Brinkevich, D. I.; Prosolovich, V. S.; Lastovskii, S. B.
- Abstract
In this work, the effect of irradiation with 5-MeV electrons on the adhesive and strength properties of the films of diazoquinone–novolac photoresists FP9120, SPR-700, and S1813 G2 SP15 deposited on single-crystalline silicon wafers by spin-coating has been studied using the indentation method. It has been established that irradiation leads to an increase in the true microhardness of the photoresist films, most pronounced in SPR-700 films, caused by the crosslinking of phenol–formaldehyde resin molecules. It has been shown that the values of the specific peeling energy G of photoresist films on silicon increase upon irradiation as a result of the recombination of radicals at the photoresist/silicon interface with the formation of new covalent bonds Si–C and Si–O–C. The observed experimental results are explained taking into account the radiation-chemical and relaxation processes occurring in the bulk of the polymer film and at the interface.
- Subjects
SILICON films; PHOTORESISTS; PHENOLIC resins; SILICON wafers; IRRADIATION; COVALENT bonds; POLYMER films
- Publication
High Energy Chemistry, 2024, Vol 58, Issue 1, p112
- ISSN
0018-1439
- Publication type
Article
- DOI
10.1134/S001814392401017X