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- Title
Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset.
- Authors
Zhang, Hongwei; Guo, Yang; Wang, Shida; Sun, Yi; Mei, Bo; Tang, Min; Liu, Jingyi
- Abstract
Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses this gap by establishing a FinFET SRAM simulation structure and employing simulation software to delve into the charge collection process of FinFET devices during single-event upset. The results reveal substantial differences in charge collection between NMOS and PMOS, and that direct incidence of PMOS leads to the phenomenon of multiple-node charge collection causing SRAM unit upset followed by recovery.
- Subjects
COLLECTIONS; STATIC random access memory
- Publication
Micromachines, 2024, Vol 15, Issue 2, p201
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi15020201