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- Title
Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor.
- Authors
Lu, Yu-Xuan; Lin, Chih-Ting; Tsai, Ming-Hsui; Lin, Kuan-Chou
- Abstract
In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.
- Subjects
FIELD-effect transistors; HYSTERESIS; CARBON
- Publication
Micromachines, 2022, Vol 13, Issue 4, pN.PAG
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi13040509