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- Title
Improvement of SiC- Si/ MAS Interface in the Joints via In Situ Synthesizing SiC Nanowires.
- Authors
Chu, Yanhui; Li, Hejun; Peng, Han; Qi, Lehua; Luo, Huijuan; Xu, Zhanwei; Zok, F.
- Abstract
Improving the SiC- Si/ MAS interface is essential for enhancing the SiC- Si/ MAS joint strength. In this work, well-dispersed SiC nanowires (NWs) were in situ synthesized at the SiC- Si/ MAS interface in the joints as the anchors, which made the fracture feature of the joints change from SiC- Si/ MAS interface fracture to MAS fracture, resulting in an obvious improvement of the shear strength. The results showed that the average shear strength of the joints was increased by 49% by in situ synthesizing SiC NWs, which was primarily attributed to the excellent interface anchoring effects of SiC NWs involving the interfacial bonding anchoring between SiC NWs and SiC- Si layer and the mechanical interlocking anchoring between SiC NWs with the junctions and the surrounding grains. This study may provide new insight into the anchoring mechanisms and suggest a new design methodology for nanowire joints, leading to improved joint strength.
- Subjects
CRYSTALLOGRAPHY; ELECTRIC properties; SILICON carbide; NANOWIRE crystallography; SYNTHESIS of nanowires; SILICON nanowires synthesis; STRENGTH of materials
- Publication
Journal of the American Ceramic Society, 2013, Vol 96, Issue 12, p3926
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/jace.12612