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- Title
Nonlinear Effects in MSM Structures Based on AgSSe.
- Authors
Gadzhieva, G.; Akhmedov, I.; Abdul-zade, N.
- Abstract
MSM structures W-Ag SSe-W have been produced and their volt-ampere characteristics in the temperature range 290-350 K and at a temperature of 77 K were investigated. It is shown that the volt- ampere characteristic of such an MSM structure is substantially nonlinear and takes an N-like shape at different polarities of the voltage applied to the structure and that the portion of this characteristic corresponding to the negative resistance of the structure is preceded by the portion with a zero slope. It was established that the breakdown voltage of the volt- ampere characteristic of an W-Ag SSe-W structure is determined by its temperature and is equal to ~0.3 V, which corresponds to the strength 1 V/cm of the electric field in it, and that the breakdown current of the structure changes by the law I ~ T 0.25 with increase in its temperature. The nonlinearity of the volt-ampere characteristics with a negative-resistance portion of the W-Ag SSe-W structures obtained is explained by the existence of the trapping level in them at a certain state of the electrons at the metal-semiconductor interface.
- Subjects
NONLINEAR analysis; DIMETHYL sulfone; SILVER compounds; TEMPERATURE effect; SEMICONDUCTOR-metal boundaries
- Publication
Journal of Engineering Physics & Thermophysics, 2015, Vol 88, Issue 4, p1030
- ISSN
1062-0125
- Publication type
Article
- DOI
10.1007/s10891-015-1281-8