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- Title
On the Growth of Stannic Oxide by Ion Beam Sputter Deposition (IBSD).
- Authors
Becker, Martin; Polity, Angelika; Klar, Peter J.
- Abstract
SnO2 thin films were grown on (0001) (<italic>c</italic>‐plane), ( 01 1 ¯ 2 ) (<italic>r</italic>‐plane), ( 11 2 ¯ 0 ) (<italic>a</italic>‐plane) and ( 10 1 ¯ 0 ) (<italic>m</italic>‐plane) sapphire substrates using ion beam sputter deposition (IBSD) of a pure metallic Sn target at a constant gas mixture of 2.5 sccm argon and 15 sccm oxygen at 550 °C substrate temperature. X‐ray diffraction in Bragg–Brentano geometry revealed that SnO2 film deposited on each substrate is grown with preferential out‐of‐plane orientation. The determined orientation relationships were SnO2 ( 100 ) ∥ Al2O3 (0001) (<italic>c</italic>‐plane), SnO2 ( 101 ) ∥ Al2O3 ( 11 2 ¯ 0 ) (<italic>a</italic>‐plane), SnO2 ( 101 ) ∥ Al2O3 ( 01 1 ¯ 2 ) (<italic>r</italic>‐plane) and SnO2 ( 002 ) ∥ Al2O3 ( 10 1 ¯ 0 ) (<italic>m</italic>‐plane). X‐ray diffraction (XRD) proved epitaxial growth, perceivable by very narrow full width at half maximum (FWHM) in rocking curves and Laue oscillations in standard Θ–2Θ Bragg–Brentano scans. X‐ray pole figures even revealed epitaxial in‐plane relationships.
- Subjects
STANNIC oxide; CRYSTAL growth; ION beam assisted deposition; GAS mixtures; X-ray diffraction
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2018, Vol 215, Issue 1, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201700623