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- Title
OPTIMIZATION OF PROCESSING TEMPERATURE TO ACHIEVE HIGH QUALITY SOL–GEL-DERIVED PZT THIN FILM.
- Authors
Dehghani, Sajjad; Barzegar, Abdolghafar; Sheikhi, Mohammad Hossein
- Abstract
Ferroelectric PbZr1-xTixO3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.
- Subjects
FERROELECTRIC crystals; THIN films; PIEZOELECTRIC materials; DIELECTRIC devices; CRYSTALLOGRAPHY; X-ray diffraction; SCANNING electron microscopy; PERMITTIVITY
- Publication
International Journal of Nanoscience, 2009, Vol 8, Issue 3, p299
- ISSN
0219-581X
- Publication type
Article
- DOI
10.1142/S0219581X09006134