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- Title
Structural and dielectric properties of ion beam deposited titanium oxynitride thin films.
- Authors
Jia, Liuwei; Lu, Huiping; Ran, Yujing; Zhao, Shujun; Liu, Haonan; Li, Yinglan; Jiang, Zhaotan; Wang, Zhi
- Abstract
Titanium oxynitride (TiOxNy) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiOxNy (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiOxNy thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiOxNy films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.
- Subjects
THIN films analysis; DIELECTRIC properties; ION beams; SPUTTERING (Physics); MICROSTRUCTURE; PLASMONICS
- Publication
Journal of Materials Science, 2019, Vol 54, Issue 2, p1452
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-018-2923-y