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- Title
Resonant tunnelling diode photodetector operating at near‐infrared wavelengths with high responsivity.
- Authors
Dong, Yu; Xu, Jianxing; Wang, Guanglong; Ni, Haiqiao; Pei, Kangming; Chen, Jianhui; Gao, Fengqi; Li, Baochen; Niu, Zhichuan
- Abstract
Resonant tunnelling diode photodetectors with a 600 nm In0.53Ga0.47As absorption layer were fabricated by molecular beam epitaxy. The current–voltage characteristics of devices with different mesa diameters were tested and the negative differential resistance was observed in all devices. The responsivity of the detector was measured to be 4.19 × 105 A/W at 77 K and 1.92 × 104 A/W at room temperature under incident light with a power of 3.1 nW.
- Publication
Electronics Letters (Wiley-Blackwell), 2015, Vol 51, Issue 16, p1355
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2015.1041