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- Title
3D Electronics: 3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics (Adv. Electron. Mater. 7/2019).
- Authors
Wu, Xiaoxiang; Ma, Haiguang; Yin, Han; Pan, Danfeng; Wang, Junzhuan; Yu, Linwei; Xu, Jun; Shi, Yi; Chen, Kunji
- Abstract
The article offers information on the concept of 3D sidewall integration of ultrahigh-density silicon nanowires for stacked channel electronics which confined to the vertical or oblique sidewall surfaces, by adopting an in-plane solid-liquid-solid growth mechanism where metal catalyst droplets absorb sidewall-coated hydrogenated amorphous Si thin film to produce orderly 3D multilevel lateral. It also mentions the use of any high resolution lithography.
- Subjects
SILICON nanowires; ELECTRONICS; FIELD-effect transistors; ELECTRONS
- Publication
Advanced Electronic Materials, 2019, Vol 5, Issue 7, pN.PAG
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.201970034