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- Title
Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties.
- Authors
Melios, Christos; Panchal, Vishal; Giusca, Cristina E.; Strupiński, Włodek; Silva, S. Ravi P.; Kazakova, Olga
- Abstract
We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accompanied by a more than three-fold increase in carrier mobility, up to μh ≈ 4540 cm2 V−1 s−1. On a local scale, Kelvin probe force microscopy provides a complete and detailed map of the surface potential distribution of graphene domains of different thicknesses. Rearrangement of graphene layers upon intercalation to (n + 1)LG, where n is the number of graphene layers (LG) before intercalation, is demonstrated. This is accompanied by a significant increase in the work function of the graphene after the H2-intercalation, which confirms the change of majority carriers from electrons to holes. Raman spectroscopy and mapping corroborate surface potential studies.
- Subjects
QUASI-free reactions; GRAPHENE; SURFACE potential; CHEMICAL vapor deposition; HYDROGEN metabolism; RAMAN spectroscopy
- Publication
Scientific Reports, 2015, p10505
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep10505