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- Title
Effect of the Coulomb scattering on graphene conductivity.
- Authors
Vyurkov, V.; Ryzhii, V.
- Abstract
The effect of the Coulomb scattering on graphene conductivity in field-effect transistor structures is discussed. Interparticle scattering (electron-electron, hole-hole, and electron-hole) and scattering on charged defects are taken into account in a wide range of gate voltages. It is shown that an intrinsic conductivity of graphene (purely ambipolar system, where both electron and hole densities exactly coincide) is defined by a strong electron-hole scattering. It has a universal value independent of the temperature. We give an explicit derivation based on the scaling theory. When there is even a small discrepancy in the electron and hole densities caused by the applied gate voltage, the conductivity is determined by both a strong electron-hole scattering and a weak external scattering: on the defects or phonons. We suggest that the density of the charged defects (occupancy of defects) depends on the Fermi energy to explain the sublinear dependence of conductivity on a fairly high gate voltage observed in the experiments. We also eliminate the contradictions between the experimental data obtained in the deposited and suspended graphene structures regarding the graphene conductivity.
- Subjects
COULOMB potential; ELECTRIC conductivity; FIELD-effect transistors; SCATTERING (Physics); ELECTRON-hole droplets; FERMI liquids
- Publication
JETP Letters, 2008, Vol 88, Issue 5, p322
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364008170074