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- Title
The Historical Development of Infrared Photodetection Based on Intraband Transitions.
- Authors
Hao, Qun; Zhao, Xue; Tang, Xin; Chen, Menglu
- Abstract
The infrared technology is entering widespread use as it starts fulfilling a growing number of emerging applications, such as smart buildings and automotive sectors. Majority of infrared photodetectors are based on interband transition, which is the energy gap between the valence band and the conduction band. As a result, infrared materials are mainly limited to semi-metal or ternary alloys with narrow-bandgap bulk semiconductors, whose fabrication is complex and expensive. Different from interband transition, intraband transition utilizing the energy gap inside the band allows for a wider choice of materials. In this paper, we mainly discuss the recent developments on intraband infrared photodetectors, including 'bottom to up' devices such as quantum well devices based on the molecular beam epitaxial approach, as well as 'up to bottom' devices such as colloidal quantum dot devices based on the chemical synthesis.
- Subjects
QUANTUM well devices; CONDUCTION bands; SEMICONDUCTOR nanocrystals; QUANTUM dot devices; BAND gaps; QUANTUM wells; QUANTUM dots
- Publication
Materials (1996-1944), 2023, Vol 16, Issue 4, p1562
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma16041562