We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Improving the Thermoelectric Properties of the Half-Heusler Compound VCoSb by Vanadium Vacancy.
- Authors
Huang, Lihong; Wang, Junchen; Mo, Xiaobo; Lei, Xiaobo; Ma, Sude; Wang, Chao; Zhang, Qinyong
- Abstract
The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.
- Subjects
THERMOELECTRICITY; VANADIUM; NONSTOICHIOMETRIC compounds; SEEBECK coefficient; THERMAL conductivity
- Publication
Materials (1996-1944), 2019, Vol 12, Issue 10, p1637
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma12101637