We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3μm InAs/GaAs QD Lasers.
- Authors
Novikov, I. I.; Gordeev, N. Yu.; Maksimov, M. V.; Shernyakov, Yu. M.; Semenova, E. S.; Vasil'ev, A. P.; Zhukov, A. E.; Ustinov, V. M.; Zegrya, G. G.
- Abstract
Semiconductor laser heterostructures containing five and ten sheets of InAs/GaAs QDs on GaAs substrates, with an emission wavelength of ∼1.3μm, have been studied. Dependences of the nonradiative lifetime and effective Auger coefficient in QDs are obtained from an analysis of temperature and current dependences of the efficiency of spontaneous radiative recombination. The zero-threshold Auger recombination channel in QDs is shown to dominate at low (below 200 K) temperature, whereas at higher temperatures the quasi-threshold channel becomes dominant. The effective 3D Auger coefficient is estimated in the approximation of a spherical QD, and a good agreement with the experimental data is obtained. © 2005 Pleiades Publishing, Inc.
- Subjects
SEMICONDUCTOR lasers; INJECTION lasers; CHEMICAL lasers; NONLINEAR optics; SEMICONDUCTORS; OPTOELECTRONIC devices; LASERS; AUGER effect; HETEROSTRUCTURES
- Publication
Semiconductors, 2005, Vol 39, Issue 4, p481
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1900267