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- Title
Effect of Sn Doping in (BiSb)SnTe (0 ≤ x ≤ 0.1) on Thermoelectric Performance.
- Authors
Cai, Zhengwei; Guo, Lijie; Xu, Xiaolong; Yan, Yanci; Peng, Kunling; Wang, Guiwen; Wang, Guoyu; Zhou, Xiaoyuan
- Abstract
We report the effect of Sn doping on the thermoelectric performance of (BiSb)SnTe compounds ( x = 0, 0.005, 0.01, 0.05, 0.1, 0.2) synthesized by the melting method followed by high-energy ball milling and spark plasma sintering. As indicated by transmission electron microscopy and scanning electron microscopy images, layered structure and inhomogeneous nanostructures are present in (BiSb)SnTe. It is found that Sn doping dramatically reduces the thermal conductivity together with a minor decline in the electrical conductivity, yielding a net enhancement of the figure of merit ( ZT). The highest ZT value is approximately 1.03 at 338 K when x is 0.01, an increase of 28.4% compared with the pure sample.
- Subjects
TIN compounds; SEMICONDUCTOR doping; THERMOELECTRICITY; SINTERING; THERMAL conductivity; ELECTRIC conductivity
- Publication
Journal of Electronic Materials, 2016, Vol 45, Issue 3, p1441
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-015-4061-5