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- Title
Dielectric Properties of Low Loss Ba<sub>6-3x</sub>Nd<sub>8+2x</sub>Ti<sub>18</sub>O<sub>54</sub> Thin Films Prepared by Pulsed Laser Deposition for Microwave Applications.
- Authors
Xia, Y. D.; Shi, G. H.; Wu, D.; Liu, Z. G.
- Abstract
Ba6-3xNd8+2xTi18O54 with x = 0.25 (BNT-0.25, or simply, BNT) dielectric thin films with a thickness of 320 nm have been prepared on Pt-coated silicon substrates by pulsed laser deposition (PLD) at the substrate temperature of 650°C in 20 Pa oxygen ambient. X-ray analysis showed that the as-deposited films are amorphous and the films remain amorphous after a postannealing at 750°C for 30 min. The dielectric constant of the BNT films has been determined to be about 80 with a low loss tan δ of about 0.006 at 1 MHz. The capacitance-voltage (C-V), capacitance-frequency, and capacitance-temperature characteristics of a BNT capacitor with Pt top electrode were measured. A low leakage-current density of 4 x 10-6 A/cm² at 6 V was measured, and a preliminary discussion of the leakage-current mechanism is also given. It is proposed that amorphous BNT-0.25 thin films will be a potential dielectric material for microwave applications.
- Subjects
DIELECTRIC films; THIN films; SILICON; AMORPHOUS substances; ELECTRODES
- Publication
Journal of Electronic Materials, 2004, Vol 33, Issue 10, p1236
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-004-0127-5