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- Title
Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.
- Authors
Maiboroda, I.; Andreev, A.; Perminov, P.; Fedorov, Yu.; Zanaveskin, M.
- Abstract
Specific features of how nonalloyed ohmic contacts to the 2D conducting channel of high-electron-mobility transistors based on AlGaN/(AlN)/GaN heterostructures are fabricated via deposition of heavily doped n-GaN through a SiO mask by ammonia molecular-beam epitaxy have been studied. The technique developed makes it possible to obtain specific resistances of contacts to the 2D gas as low as 0.11 Ω mm on various types of Ga-face nitride heterostructures, which are several times lower than the resistance of conventional alloyed ohmic contacts.
- Subjects
ALUMINUM gallium nitride; MODULATION-doped field-effect transistors; MOLECULAR beam epitaxy; OHMIC contacts; ELECTRON gas; HETEROJUNCTIONS
- Publication
Technical Physics Letters, 2014, Vol 40, Issue 6, p488
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785014060091