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- Title
The initial stage of growth of self-induced GaN nanowires.
- Authors
Koryakin, A.; Sibirev, N.; Dubrovskii, V.
- Abstract
The initial growth stage of self-induced GaN nanowires (NWs) on an AlN(0001)/Si(111) substrate is studied theoretically. Calculations are carried out within the model of Stranski-Krastanov quantum dot formation. The surface density of GaN islands is calculated, the formation of which precedes NW formation. GaN NW density is found as a function of gallium flux and deposition time for the case of molecular beam epitaxy growth.
- Subjects
SELF-induced vibration; GALLIUM nitride; NANOWIRES; QUANTUM dots; MOLECULAR beam epitaxy; MATHEMATICAL models
- Publication
Technical Physics Letters, 2014, Vol 40, Issue 6, p471
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785014060078