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- Title
Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method.
- Authors
Firsov, D.; Komkov, O.
- Abstract
A method for measuring photoreflectance (PR) by using a Fourier transform infrared (FTIR) spectrometer has been implemented. Features of application of the phase-correction method necessary for storing information on the sign of the spectrum were revealed. The method was applied for measuring the energy spectrum of charge carriers in InGaAs/GaAs single quantum wells in the near-infrared range. A good agreement with the results obtained by means of a diffraction spectrometer for the same samples in the same wavelength range is observed. Application of the developed photomodulation FTIR spectroscopy method for measuring photoreflectance in InSb epitaxial layers in the wavelength range of 2-10 μm has been demonstrated.
- Subjects
FOURIER transform infrared spectroscopy; QUANTUM wells; INDIUM gallium arsenide; CARRIER density; NEAR infrared radiation; EPITAXIAL layers; WAVELENGTHS
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 12, p1071
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785013120079