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- Title
Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well.
- Authors
Slipchenko, S.; Podoskin, A.; Pikhtin, N.; Leshko, A.; Rozhkov, A.; Tarasov, I.
- Abstract
Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total output optical power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p- n junction.
- Subjects
INDIUM gallium arsenide; SEMICONDUCTORS; GALLIUM arsenide; INJECTION lasers; WAVEGUIDES; QUANTUM wells; OPTICAL apertures
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 4, p364
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785013040251