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- Title
The electrical and structural properties of In<sub> y</sub>Ga<sub>1 − y</sub>As/In<sub> x</sub>Al<sub>1 − x</sub>As/InP quantum wells with different InAs content.
- Authors
Vasil'evskiĭ, I. S.; Galiev, G. B.; Mokerov, V. G.; Klimov, E. A.; Imamov, R. M.; Subbotin, I. A.
- Abstract
In xAl1 − xAs/In yGa1 − yAs/In xAl1 − xAs/InP HEMT structures has been investigated with a change in the InAs molar fraction both in the quantum well and the buffer layer. The electrical parameters of the samples are measured at different temperatures. The structural parameters of the layers and the characteristics of the interfaces between them are determined by double-crystal X-ray diffraction. An increase in the Hall mobility and electron concentration, as well as in the structural quality of the samples, is observed alongside an increase in the InAs molar fraction in the quantum well. It is established that high electron mobility is retained at small (to 5%) mismatches between the buffer layer and substrate.
- Subjects
CRYSTALS; QUANTUM wells; X-ray diffraction; ELECTRON mobility; INDIUM; ARSENIC
- Publication
Crystallography Reports, 2010, Vol 55, Issue 1, p6
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774510010025