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- Title
p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.
- Authors
Shaoqian Lu; Guohao Yu; Yingfei Sun; Xu Yuan; Zhongkai Du; Bingliang Zhang; Lu Wang; Yu Li; Dongdong Wu; Zengli Huang; Zhongming Zeng; Xulei Qin; Baoshun Zhang
- Abstract
In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p-GaN/AlGaN/GaN high-electron-mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p-GaN layer to change the surface characteristics. The transition of the p-GaN layer from p-type to n-type results in the formation of the 2D electron gas at the AlGaN/GaN interface. The X-ray photoelectron spectroscopy (XPS) testing and the fitting of mechanism for reverse gate leakage current both imply that the nitrogen plasma treatment has a beneficial effect on the surface condition. The device exhibits enhanced performance, with threshold voltage of 1.1 V, on/off ratio of 1 x 109, maximum drain current of 245 mAmm-1, and breakdown voltage of 1215 V.
- Subjects
MODULATION-doped field-effect transistors; TWO-dimensional electron gas; GALLIUM nitride; NITRIDATION; X-ray photoelectron spectroscopy; NITROGEN plasmas
- Publication
Physica Status Solidi - Rapid Research Letters, 2024, Vol 18, Issue 4, p1
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.202300301