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- Title
Contactless characterization of manganese and carbon delta-layers in gallium arsenide.
- Authors
Komkov, O.; Kudrin, A.
- Abstract
Single manganese and carbon δ-layers in undoped GaAs are analyzed by photoreflectance spectroscopy. The strength of built-in electric fields, determined by this method, is shown to increase with increasing layer concentration of introduced impurities and well correlate with technological and Hall data. The use of phase-sensitive photoreflectance makes it possible to measure the surface field and the field induced by δ-doping separately. This fact allows one to determine without contact the fraction of electrically active Mn impurity and reveal the contribution of carbon δ-layers to the characteristics of GaAs-based heterostructures.
- Subjects
GALLIUM arsenide transistors; PHOTOREFLECTANCE; REFLECTANCE; DOPING agents (Chemistry); IMPURITY centers
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1420
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110161