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- Title
Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures.
- Authors
Rice, Anthony D.; Lee, Choong Hee; Fluegel, Brian; Norman, Andrew G.; Nelson, Jocienne N.; Jiang, Chun Sheng; Steger, Mark; McGott, Deborah L.; Walker, Patrick; Alberi, Kirstin
- Abstract
Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostructures is demonstrated by epitaxially incorporating the Dirac semimetal Cd3As2 between ZnxCd1‐xTe and CdTe layers via molecular beam epitaxy on GaAs (001) substrates. The approach utilizes the higher energy (001) surface of Cd3As2 to stabilize 2D epitaxy of zinc blende semiconductors. To demonstrate the impact heterostructure formation offers to device performance, an all‐epitaxial, barrier‐type vertical photodetector is fabricated that accesses a different carrier separation mechanism than previously reported non‐epitaxial junctions and consequently exhibits significantly reduced dark currents. The results highlight the important role that epitaxial integration can play in accessing advanced architectures for topological semimetal‐based devices.
- Subjects
MOLECULAR beam epitaxy; HETEROSTRUCTURES; SPHALERITE; SEMIMETALS; SEMICONDUCTORS
- Publication
Advanced Functional Materials, 2022, Vol 32, Issue 21, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202111470