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- Title
High-Performance Near-IR Photodetector Using Low-Bandgap MA<sub>0.5</sub>FA<sub>0.5</sub>Pb<sub>0.5</sub>Sn<sub>0.5</sub>I<sub>3</sub> Perovskite.
- Authors
Xu, Xiaobao; Chueh, Chu‐Chen; Jing, Peifeng; Yang, Zhibin; Shi, Xueliang; Zhao, Ting; Lin, Lih Y.; Jen, Alex K.‐Y.
- Abstract
Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high-performance near-IR (NIR) photodetector using a stable low-bandgap Sn-containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn-containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low-cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications.
- Subjects
OPTOELECTRONICS; PEROVSKITE; PHOTODETECTORS; LEAD compounds; OPTICAL spectroscopy
- Publication
Advanced Functional Materials, 2017, Vol 27, Issue 28, pn/a
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.201701053