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- Title
SiC trench MOSFET with self-biased p-shield for low R<sub>ON-SP</sub> and low OFF-state oxide field.
- Authors
Meng Zhang; Jin Wei; Huaping Jiang; Chen, Kevin J.; Ching-Hsiang Cheng
- Abstract
A SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with a self-biased p-shield (SBS-MOS) is proposed and comprehensively studied. The p-shield region is used to reduce the high oxide field at the OFF-state, which would otherwise be detrimental to the device long-term reliability. A self-biasing network is designed to raise the potential of the pshield in the SBS-MOS, so that the parasitic junction field effect transistor (JFET) is driven synchronously with the MOS-gate. Mixed-mode numerical simulations are carried out to study the performance of the proposed device. The SBS-MOS boasts a reduced specific ON-resistance (RON-SP) compared with the trench MOSFET with a grounded p-shield (GS-MOS), by the reduction of the JFET resistance and/or further down-scaling of the cell size. To synchronously drive the JFET region, only a slightly larger gate charge is required for the SBS-MOS. Therefore, a low OFF-state oxide field, a low RON-SP and a low QGD are simultaneously achieved in the proposed SBS-MOS.
- Subjects
METAL oxide semiconductor field-effect transistors; FIELD-effect transistors; MOLECULAR dynamics; SEMICONDUCTOR materials; ELECTRIC resistance
- Publication
IET Power Electronics (Wiley-Blackwell), 2017, Vol 10, Issue 10, p1208
- ISSN
1755-4535
- Publication type
Article
- DOI
10.1049/iet-pel.2016.0945