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- Title
Bifacial Wide‐Gap (Ag,Cu)(In,Ga)Se<sub>2</sub> Solar Cell with 13.6% Efficiency Using In<sub>2</sub>O<sub>3</sub>:W as a Back Contact Material.
- Authors
Keller, Jan; Stolt, Lars; Donzel-Gargand, Olivier; Violas, André F.; Kubart, Tomas; Edoff, Marika
- Abstract
This study evaluates In2O3:W as a transparent back contact material in wide‐gap (bandgap range = 1.44–1.52 eV) (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells for potential application as a top cell in a tandem device. High silver concentrations and close‐stoichiometric absorber compositions result in a complete depletion of free charge carriers, allowing for decent electron collection, despite the low diffusion length. Remarkable efficiencies of 13.6% and 7.5% are reached using 1 μm‐ and 400 nm‐thick absorbers, respectively. At rear illumination (i.e., superstrate backwall), the best cell shows an efficiency of 8.7%. For each of the four analyzed samples, the short‐circuit current at rear illumination reaches at least 60% of the value at front illumination. Losses arise from recombination at the back contact and a too low drift/diffusion length. The parasitic absorption by the transparent electrodes for photon energies close to the bandgap of a potential Si bottom cell (1.1 eV) is close to 15%. Strategies to reduce this value and to further increase the efficiency are discussed.
- Subjects
SOLAR cell efficiency; SILVER alloys; SOLAR cells; PHOTONS; LIGHTING
- Publication
Solar RRL, 2024, Vol 8, Issue 15, p1
- ISSN
2367-198X
- Publication type
Article
- DOI
10.1002/solr.202400430