Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleOn the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing.AuthorsFalster, R.; Voronkov, V.V.; Quast, F.PublicationPhysica Status Solidi (B), 2000, Vol 222, Issue 1, p219ISSN0370-1972Publication typeArticleDOI10.1002/1521-3951(200011)222:1<219::AID-PSSB219>3.0.CO;2-U