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- Title
The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature.
- Authors
Sun, Y. B.; Di, Z. F.; Hu, T.; Xie, X. M.
- Abstract
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.
- Subjects
SUPERCONDUCTORS; ELECTRIC insulators &; insulation; SEMICONDUCTOR doping profiles; SINGLE crystals; ANNEALING of metals; GERMANIUM crystals
- Publication
Advances in Condensed Matter Physics, 2015, Vol 2015, p1
- ISSN
1687-8108
- Publication type
Article
- DOI
10.1155/2015/963768