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- Title
Si SUBSTRATE BASED GaN: NITRONEX VIEWPOINT.
- Authors
Nagy, Walter
- Abstract
The article focuses on silicon (Si) substrate-based gallium nitride (GaN) technology. It is said that GaN played a vital role in improvised explosives devices (IED) jammers and new military communications systems. It identifies future military markets for GaN and cites the challenge for GaN as a traveling wave tube (TWT) replacement. It also reports the growing activity of GaN in the wireless infrastructure market in both high power amplifier (HPA) and low noise amplifier (LNA) applications.
- Subjects
SILICON; GALLIUM nitride; IMPROVISED explosive devices; MILITARY communications; MILITARY markets; POWER amplifiers; LOW noise amplifiers
- Publication
Microwave Journal, 2012, Vol 55, Issue 6, p28
- ISSN
0192-6225
- Publication type
Article