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Title
EXTREMELY RUGGED UHF 600 W LDMOS TRANSISTORS.
Abstract
The article offers a description of MRFE6VP860bH and MRFE6VP8600HS, two laterally diffused metal oxide semiconductor (LDMOS) power transistors developed by Freescale Semiconductor. The transistors are optimized for use in the ultrahigh frequency (UHF) broadcast transmitter industry and have shown high efficiency and reliability in performance tests.