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- Title
Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors.
- Authors
Ivanov, A.; Strokan, N.; Lebedev, A.
- Abstract
In wide-gap materials used in nuclear detectors, the polarization effect is typically observed when the concentration of radiation-induced defects is high. An emf arising in the detector is associated with long-term trapping of charge carries by deep radiation-induced levels (centers). The polarization kinetics and the polarization field strength are determined experimentally. The trapping efficiency can be controlled by varying the temperature, and a tradeoff can be reached at an 'optimal' temperature between the generation current and the position of the deepest level, which has a negligible effect on charge losses via trapping. It is found that the ratio between the depth of this level and the bandgap is about 1/3 irrespective of the material but the optimal temperature is material-specific.
- Subjects
NUCLEAR counters; SILICON carbide; WIDE gap semiconductors; RADIATION; POLARIZATION (Electricity); ELECTRIC charge; TEMPERATURE effect
- Publication
Technical Physics, 2012, Vol 57, Issue 4, p556
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784212040111