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- Title
Low-temperature recrystallization of Ge nanolayers on ZnSe.
- Authors
Suprun, S. P.; Fedosenko, E. V.
- Abstract
The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3 d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.
- Subjects
X-rays; PHOTOELECTRONS; SPECTRUM analysis; AMORPHOUS semiconductors; SEMICONDUCTORS; NANOSTRUCTURES
- Publication
Semiconductors, 2007, Vol 41, Issue 5, p590
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378260705020X