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- Title
Gallium Nitride: Charge Neutrality Level and Interfaces.
- Authors
Brudnyi, V.
- Abstract
An analysis of experimental data revealed the dependence of the metal/ n-GaN GaN(0001) barrier height on the metal work function, as predicted by the model that takes into account the charge neutrality level of the semiconductor. In case of the metal/ p-GaN(Mg) barriers, significant scatter of the corresponding experimental data is observed and pinning of the near-surface Fermi level near E + 2.5 eV takes place in most structures, which is due to the influence of high density of interface defect states formed during the process of the GaN doping by Mg impurity.
- Subjects
GALLIUM nitride; SEMICONDUCTOR research; DIELECTRICS research; SEMICONDUCTOR doping; QUANTUM tunneling
- Publication
Russian Physics Journal, 2016, Vol 58, Issue 11, p1613
- ISSN
1064-8887
- Publication type
Article
- DOI
10.1007/s11182-016-0691-1