We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Investigation of in situ grown P-doped nc-SiO<sub>x</sub>: H thin film as the n layer for the application of thin film solar cell.
- Authors
Genyi, Fu; Wei, Cai
- Abstract
As a key component layer of thin-film solar cell device, the property of n-layer significantly determines the photovoltaic performance. In this work, the phosphorous-doped hydrogenated nanocrystalline silicon oxide thin films are in situ prepared by plasma-enhanced chemical vapor deposition (PECVD) method at a low substrate temperature (150 °C), a mixture of He and Ar is applied as a dilution. A series of characterizations have been carried out for investigating the film properties. It is found that by adjusting He/Ar flow ratio, the structural and electrical properties are controllable, while a high conductivity of 2.08 S/cm can be achieved. Moreover, thin-film solar cells are prepared with the phosphorous-doped hydrogenated nanocrystalline silicon oxide thin films as the n layer, and the contribution of n layer on cell performance has been studied.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 26, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-13498-0