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- Title
Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures.
- Authors
Baraz, Nalan; Yücedağ, İbrahim; Azizian-Kalandaragh, Yashar; Altındal, Şemsettin
- Abstract
We have studied electrical and dielectric parameters of the Al/ZnS-PVA/p-Si structures using admittance measurements. For this aim, capacitance/conductance-voltage ( C/ G- V) measurements were performed in the frequency range of 10 kHz-5 MHz and voltages (±4 V) by 50 mV steps at 300 K. Experimental results confirmed that both electric and dielectric parameters are strong function of frequency and voltage and they are especially influenced from series resistance ( R ), surface states ( N ) and polarization processes. The values of R and N which are obtained from the Nicollian and Brews and Hill-Coleman method, respectively, and they are decrease with increasing frequency almost as exponentially. In addition, the values of real and imaginary part of the dielectric constants ( ε′ and ε″) and electric modules ( M′ and M″), loss tangent ( tanδ), and ac electrical conductivity ( σ ) were obtained using C and G/ω data as function of applied bias voltage and they are found to a strong functions of frequency. While the values of ε′, ε″, and tanδ increase with increasing frequency, M′ and σ decrease. Moreover, the ε′, ε″, tanδ, and σ increase with applied bias voltage, whereas the M′ decreases with increasing applied bias voltage. The M″ versus V plot shows a peak and its position shifts to the right with increasing bias voltage and it disappears at high frequencies. As a result, the change in the ε′, ε″, tanδ, M′, M″ and σ is a result of restructuring and reordering of charges at the (ZnS-PVA)/p-Si interface under an external electric field or voltage and interface polarization.
- Subjects
ELECTRIC admittance measurement; ELECTRIC admittance; CAPACITANCE measurement; POLARIZATION (Electricity); PERMITTIVITY
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 2, p1315
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5662-3