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- Title
Thermally activated dissipation mechanism in Sn doped CuTl-1223 superconductors.
- Authors
Khan, Nawazish A.; Firdous, Tayyaba; Kameli, P.; Irfan, M.; Hassan, Najmul
- Abstract
We have carried out magneto-resistance measurements of Sn-doped CuTlBaCaCuSO ( y = 0.5, 1.0, 1.5) superconductors and from there studied the effect of Sn doping on the thermally activated dissipation mechanism. A systematic decrease in T( R = 0) and shift of T (onset) towards lower temperature is typical feature of Sn-doped samples with the increased strength of external magnetic field. In these samples pronounced broadening of resistive transitions has been observed on the application of external magnetic field. The activation energy of carriers obtained from the Arrhenius plots of log (ρ) versus 1000/ T have been found to decrease with the increase in the applied external field as well as increased Sn doping concentration. From log (ρ) versus U/ T plots we have found that for lower concentration of Sn the thermally activated dissipation can be explained in terms of flux creep. On the other hand for higher concentration of Sn, flux flow mechanism of energy dissipation seems to be dominant.
- Subjects
SEMICONDUCTOR doping; TIN; MAGNETORESISTANCE; MAGNETIC fields; ENERGY dissipation
- Publication
Journal of Materials Science: Materials in Electronics, 2010, Vol 21, Issue 12, p1308
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-010-0067-1