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- Title
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
- Authors
Frigeri, C.; Attolini, G.; Bosi, M.; Pelosi, C.; Germini, F.
- Abstract
The article shows the application of (200) dark field TEM to the detection and analysis of the extra interlayer that typically forms at the GaAs-on-InGaP interface in metal organic vapour phase epitaxy (MOVPE) InGaP/GaAs heterojunctions. Calculations of the dark field (DF) contrast function in the kinematical approximation show that the interlayer can be either GaAsP or InGaAsP for some values of the composition. Comparison with high-resolution X-ray diffraction results allowed to better estimate the composition ranges of the two compounds. The possible mechanisms responsible for the formation of either GaAsP or InGaAsP are briefly discussed.
- Subjects
METAL organic chemical vapor deposition; CHEMICAL vapor deposition; CONTRAST media; X-ray diffraction; DIAGNOSTIC imaging; SURFACE chemistry; KINEMATICS; HETEROJUNCTIONS; OPTICAL resolution
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, p107
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9556-2