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- Title
GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.
- Authors
Shixiong Liang; Yulong Fang; Dong Xing; Zhirong Zhang; Junlong Wang; Hongyu Guo; Lisen Zhang; Guodong Gu; Zhihong Feng
- Abstract
GaN planar Schottky barrier diode (SBD) with an n-/n+ structure was grown and fabricated on sapphire substrate. An n GaN epitaxial layer with doping concentration of 8 x 1018 cm-3 was employed to reduce the parasitic resistance. An air-bridge structure and 50 µm substrate thinning-down technique were adopted in order to reduce the parasitic capacitance. A record cut-off frequency (fc) of 902 GHz was achieved for GaN planar SBD with 2 µm anode diameter.
- Subjects
SCHOTTKY barrier diodes; SEMICONDUCTOR diodes; SEMICONDUCTOR-metal boundaries; SCHOTTKY barrier; SEMICONDUCTORS
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 16, p1408
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.1937